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FEATURES

LT5558 600MHz to 1100MHz High Linearity Direct Quadrature Modulator DESCRIPTION
The LT(R)5558 is a direct I/Q modulator designed for high performance wireless applications, including wireless infrastructure. It allows direct modulation of an RF signal using differential baseband I and Q signals. It supports GSM, EDGE, CDMA, CDMA2000, and other systems. It may also be configured as an image reject upconverting mixer, by applying 90 phase-shifted signals to the I and Q inputs. The high impedance I/Q baseband inputs consist of voltage-to-current converters that in turn drive doublebalanced mixers. The outputs of these mixers are summed and applied to an on-chip RF transformer, which converts the differential mixer signals to a 50 single-ended output. The balanced I and Q baseband input ports are intended for DC coupling from a source with a common-mode voltage level of about 2.1V. The LO path consists of an LO buffer with single-ended input, and precision quadrature generators which produce the LO drive for the mixers. The supply voltage range is 4.5V to 5.25V.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.

Direct Conversion from Baseband to RF High OIP3: + 22.4dBm at 900MHz Low Output Noise Floor at 20MHz Offset: No RF: -158dBm/Hz POUT = 4dBm: -152.7dBm/Hz Low Carrier Leakage: -43.7dBm at 900MHz High Image Rejection: -49dBc at 900MHz 3 Channel CDMA2000 ACPR: -70.4dBc at 900MHz Integrated LO Buffer and LO Quadrature Phase Generator 50 AC-Coupled Single-ended LO and RF Ports High Impedance Interface to Baseband Inputs with 2.1V Common Mode Voltage 16-Lead QFN 4mm x 4mm Package
APPLICATIONS

RFID Single-Sideband Transmitters Infrastructure TX for Cellular and ISM Bands Image Reject Up-Converters for Cellular Bands Low-Noise Variable Phase-Shifter for 600MHz to 1100MHz Local Oscillator Signals Microwave Links
TYPICAL APPLICATION
600MHz to 1100MHz Direct Conversion Transmitter Application
VCC 8, 13 14 IDAC 16 V-1 I-CH 1 EN 90 7 QDAC 5 Q-CH V-1 BALUN O 11 LT5558
ACPR, ALTCPR (dBc)
CDMA2000 ACPR, AltCPR and Noise vs RF Output Power at 900MHz for 1 and 3 Carriers
-40 DOWNLINK TEST MODEL 64 DPCH 3-CH ACPR 3-CH ALTCPR -60 1-CH ACPR -70 1-CH NOISE -80 1-CH ALTCPR 3-CH NOISE -150 -140 -130 -110 NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
5V 2 x 100nF
RF = 600MHz TO 1100MHz PA
-50
-120
BASEBAND GENERATOR 2, 4, 6, 9, 10, 12, 15, 17 3 VCO/SYNTHESIZER
5558 TA01
-90 -30
-20 -15 -10 -5 0 -25 RF OUTPUT POWER PER CARRIER (dBm)
5558 TA01b
-160
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LT5558 ABSOLUTE MAXIMUM RATINGS
(Note 1)
PACKAGE/ORDER INFORMATION
TOP VIEW BBMI BBPI GND VCC
BBMQ
BBPQ
Supply Voltage ........................................................5.5V Common-Mode Level of BBPI, BBMI and BBPQ, BBMQ .......................................................2.5V Voltage on any Pin Not to Exceed....................-500mV to (VCC + 500mV) Operating Ambient Temperature (Note 2) ............................................... -40C to 85C Storage Temperature Range................... -65C to 125C
ORDER PART NUMBER LT5558EUF
12 GND 11 RF 10 GND 9 GND
16 15 14 13 EN 1 GND 2 LO 3 GND 4 5 6 GND 7 8 VCC
UF PART MARKING 5558
UF PACKAGE 16-LEAD (4mm x 4mm) PLASTIC QFN TJMAX = 125C, JA = 37C/W EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
SYMBOL RF Output (RF) fRF S22, ON S22, OFF NFloor RF Frequency Range RF Output Return Loss RF Output Return Loss RF Output Noise Floor PARAMETER
VCC = 5V, EN = High, TA = 25C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90 shifted (upper sideband selection). PRF(OUT) = -10dBm, unless otherwise noted. (Note 3)
CONDITIONS -3 dB Bandwidth -1 dB Bandwidth EN = High (Note 6) EN = Low (Note 6) No Input Signal (Note 8) PRF = 4dBm (Note 9) PRF = 4dBm (Note 10) POUT/PIN,I&Q 20 * Log (VOUT, 50/VIN, DIFF, I or Q) 1VP-P DIFF CW Signal, I and Q (Note 17) (Note 7) (Notes 13, 14) (Notes 13, 15) (Note 16) EN = High, PLO = 0dBm (Note 16) EN = Low, PLO = 0dBm (Note 16) PRF = 2dBm MIN TYP 600 to 1100 680 to 960 -15.8 -13.3 -158 -152.7 -152.3 9.7 -5.1 -1.1 -26.5 7.8 65 22.4 -49 -43.7 -60 0.6 600 to 1100 -10 0 5 MAX UNITS MHz MHz dB dB dBm/Hz dBm/Hz dBm/Hz dB dB dBm dB dBm dBm dBm dBc dBm dBm % MHz dBm
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GP GV POUT G3LO vs LO OP1dB OIP2 OIP3 IR LOFT EVM LO Input (LO) fLO PLO
Conversion Power Gain Conversion Voltage Gain Absolute Output Power 3 * LO Conversion Gain Difference Output 1dB Compression Output 2nd Order Intercept Output 3rd Order Intercept Image Rejection Carrier Leakage (LO Feedthrough) GSM Error Vector Magnitude LO Frequency Range LO Input Power
2
LT5558 ELECTRICAL CHARACTERISTICS
SYMBOL S11, ON S11, OFF NFLO GLO IIP3LO BWBB VCMBB RIN, DIFF RIN, CM ICM, COMP PLO-BB IP1dB GI/Q I/Q VCC ICC(ON) ICC(OFF) tON tOFF Enable Shutdown PARAMETER LO Input Return Loss LO Input Return Loss LO Input Referred Noise Figure LO to RF Small-Signal Gain LO Input 3rd Order Intercept Baseband Bandwidth DC Common-mode Voltage Differential Input Resistance Common Mode Input Resistance Common Mode Compliance Current range Carrier Feedthrough on BB Input 1dB compression point I/Q Absolute Gain Imbalance I/Q Absolute Phase Imbalance Supply Voltage Supply Current Supply Current, Sleep mode Turn-On Time Turn-Off Time Input High Voltage Input High Current Input Low Voltage EN = High EN = 0V EN = Low to High (Note 11) EN = High to Low (Note 12) EN = High EN = 5V EN = Low 1 230 0.5 4.5
VCC = 5V, EN = High, TA = 25C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90 shifted (upper sideband selection). PRF(OUT) = -10dBm, unless otherwise noted. (Note 3)
CONDITIONS EN = High (Note 6) EN = Low (Note 6) (Note 5) at 900MHz (Note 5) at 900MHz (Note 5) at 900MHz -3dB Bandwidth (Note 4) Between BBPI and BBMI (or BBPQ and BBMQ) (Note 20) (Notes 18, 20) POUT = 0 (Note 4) Differential Peak-to-Peak (Notes 7, 19) MIN TYP -10.6 -2.5 14.6 16.4 -3.3 400 2.1 3 100 -820 to 440 -46 3.4 0.05 0.2 5 108 0.1 0.3 1.1 5.25 135 50 MAX UNITS dB dB dB dB dBm MHz V k A dBm VP-P,DIFF dB Deg V mA A s s V A V
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
Power Supply (VCC)
Enable (EN), Low = Off, High = On
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Specifications over the -40C to 85C temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: Tests are performed as shown in the configuration of Figure 7. Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ. Note 5: VBBPI - VBBMI = 1VDC, VBBPQ - VBBMQ = 1VDC. Note 6: Maximum value within -1dB bandwidth. Note 7: An external coupling capacitor is used in the RF output line. Note 8: At 20MHz offset from the LO signal frequency. Note 9: At 20MHz offset from the CW signal frequency. Note 10: At 5MHz offset from the CW signal frequency. Note 11: RF power is within 10% of final value. Note 12: RF power is at least 30dB lower than in the ON state.
Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set in such a way that the two resulting RF tones are -10dBm each. Note 14: IM2 measured at LO frequency + 4.1MHz Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency + 2.2MHz. Note 16: Amplitude average of the characterization data set without image or LO feedthrough nulling (unadjusted). Note 17: The difference in conversion gain between the spurious signal at f = 3 * LO - BB versus the conversion gain at the desired signal at f = LO + BB for BB = 2MHz and LO = 900MHz. Note 18: Common mode current range where the common mode (CM) feedback loop biases the part properly. The common mode current is the sum of the current flowing into the BBPI (or BBPQ) pin and the current flowing into the BBMI (or BBMQ) pin. Note 19: The input voltage corresponding to the output P1dB. Note 20: BBPI and BBMI shorted together (or BBPQ and BBMQ shorted together).
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LT5558 TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) RF Output Power vs LO Frequency at 1VP-P Differential Voltage Gain vs LO Frequency Supply Current vs Supply Voltage Baseband Drive
130 2 0 SUPPLY CURRENT (mA) 120 85C 110 25C 100 -40C RF OUTPUT POWER (dBm) VOLTAGE GAIN (dB) -2 -4 -6 -8 -10 90 4.5 4.75 5 SUPPLY VOLTAGE (V) 5.25
5558 G01
-2 -4 -6 -8 -10 -12 -14 -16 550 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 850 950 1050 1150 1250
5558 G03
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 950 1050 1150 1250 LO FREQUENCY (MHz)
5558 G02
-12 550
850
LO FREQUENCY (MHz)
Output IP3 vs LO Frequency
26 24 22 OIP3 (dBm) 20 18 16 14 12 550 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 950 1050 1150 1250 LO FREQUENCY (MHz)
5558 G04
Output IP2 vs LO Frequency
75 fIM2 = fBB, 1 + fBB, 2 + fLO fBB, 1 = 2MHz 70 fBB, 2 = 2.1MHz 10 8 6 4 2 0
Output 1dB Compression vs LO Frequency
fBB, 1 = 2MHz fBB, 2 = 2.1MHz
60 55 50 45 550 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 950 1050 1150 1250 LO FREQUENCY (MHz)
5558 G05
OP1dB (dBm)
65 OIP2 (dBm)
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 850 950 1050 1150 1250
5558 G06
850
850
-2 550
LO FREQUENCY (MHz)
LO Feedthrough to RF Output vs LO Frequency
-40 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -40
2 * LO Leakage to RF Output vs 2 * LO Frequency
-45 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C
3 * LO Leakage to RF Output vs 3 * LO Frequency
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C
LO FEEDTHROUGH (dBm)
2 * LO LEAKAGE (dBm)
3 * LO LEAKAGE (dBm)
-42
-45
-50
-55
-44
-50
-60
-46
-55
-65
-48 550
650 750
950 1050 1150 1250 LO FREQUENCY (MHz)
5558 G07
850
-60 1.1
1.3
2.3 2 * LO FREQUENCY (GHz)
1.5
1.7
1.9
2.1
2.5
5558 G08
-70 1.65 1.95 2.25 2.55 2.85 3.15 3.5 3.75 3 * LO FREQUENCY (GHz)
5558 G09
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LT5558
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) Noise Floor vs RF Frequency
-157 fLO = 900MHz (FIXED) NO BASEBAND SIGNAL IMAGE REJECTION (dBc) -30 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C S11 (dB)
TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25C, fLO = 900MHz,
LO and RF Port Return Loss vs RF Frequency
0
Image Rejection vs LO Frequency
LO PORT, EN = LOW -10 LO PORT, EN = HIGH, PLO = 0dBm
-158 NOISE FLOOR (dBm/Hz)
-35
-159
-40
-20
RF PORT, EN = LOW RF PORT, EN = HIGH, PLO = 0dBm
-160 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 650 750 850 950 1050 1150 1250
5558 G24
-45
-161
-30 -50
LO PORT, EN = HIGH, PLO = -10dBm RF PORT, EN = HIGH, NO LO 650 750 850 950 1050 1150 1250
5558 G25
-162 550
-55 550
650 750
850
950 1050 1150 1250
5558 G10
-40 550
RF FREQUENCY (MHz)
LO FREQUENCY (MHz)
FREQUENCY (MHz)
Absolute I/Q Gain Imbalance vs LO Frequency
0.2 ABSOLUTE I/Q PHASE IMBALANCE (DEG) ABSOLUTE I/Q GAIN IMBALANCE (dB) 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 0.1 4
Absolute I/Q Phase Imbalance vs LO Frequency
-2 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -4 -6 VOLTAGE GAIN (dB) -8 -10 -12 -14 -16 -18 0 550 650 750 850 950 1050 1150 1250
5558 G12
Voltage Gain vs LO Power
3
2
1
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -16 -12 -8 -4 0 4 8
5558 G13
0 550
650 750
850
950 1050 1150 1250
5558 G11
-20 -20
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO INPUT POWER (dBm)
Output IP3 vs LO Power
24 22 LO FEEDTHROUGH (dBm) -42 20 OIP3 (dBm) 18 16 14 12 10 -20 fBB, 1 = 2MHz fBB, 2 = 2.1MHz -16 -12 -8 -4 0 4 8
5558 G14
LO Feedthrough vs LO Power
-40 -35
Image Rejection vs LO Power
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C
-44
IMAGE REJECTION (dBc)
-40
-45 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -16 -12 -8 -4 0 4 8
5558 G16
-46 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -16 -12 -8 -4 0 4 8
5558 G15
-50
-48
-50 -20
-55 -20
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
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LT5558 TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Temperature
-10 -20 RF -30 HD2, HD3 (dBc) -40 HD3 -50 HD2 -60 -70 -80 0 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) 1 2 3 -40C 25C 85C -40 -50 -60
5558 G17
RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Supply Voltage
10 0 RF CW OUTPUT POWER (dBm) -10 -20 -30 -10 -20 RF -30 HD2, HD3 (dBc) -40 HD3 -50 HD2 -60 -70 -80 0 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) 1 2 3 4.5V 5V 5.5V -40 -50 -60
5558 G18
LO Feedthrough to RF Output vs CW Baseband Voltage
10 0 RF CW OUTPUT POWER (dBm) LO FEEDTHROUGH (dBm) -10 -20 -30 -35 -30 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C
-40
-45
-50 0 1 2 3 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
5558 G19
HD2 = MAX POWER AT fLO + 2 * fBB OR fLO - 2 * fBB HD3 = MAX POWER AT fLO + 3 * fBB OR fLO - 3 * fBB
HD2 = MAX POWER AT fLO + 2 * fBB OR fLO - 2 * fBB HD3 = MAX POWER AT fLO + 3 * fBB OR fLO - 3 * fBB
Image Rejection vs CW Baseband Voltage
-40 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 10 0 PTONE (dBm) IM2, IM3, (dBc) -10 -20
RF Two-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Temperature
10 0 PTONE (dBm) IM2, IM3, (dBc) RF -10
RF Two-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Supply Voltage
RF
IMAGE REJECTIOIN (dBc)
-45
-50
fBBI = 2MHz, 2.1MHz, 0 -30 fBBQ = 2MHz, 2.1MHz, 90 -40 -50 -60 -70 IM3 IM2 -40C 25C 85C
-20 fBBI = 2MHz, 2.1MHz, 0 fBBQ = 2MHz, 2.1MHz, 90 -30 -40 -50 -60 -70 IM3 IM2
-55
4.5V 5V 5.5V
-60 0 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
5558 G20
1
2
3
-80 1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P, DIFF, EACH TONE)
5558 G21
-80 1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P, DIFF, EACH TONE)
5558 G22
IM2 = POWER AT fLO + 4.1MHz IM3 = MAX POWER AT fLO + 1.9MHz OR fLO + 2.2MHz
IM2 = POWER AT fLO + 4.1MHz IM3 = MAX POWER AT fLO + 1.9MHz OR fLO + 2.2MHz
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LT5558
VCC = 5V, EN = High, TA = 25C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) Gain Distribution
30 25 PERCENTAGE (%) 20 15 10 5 0 0 -158 -157.5 -157 NOISE FLOOR (dBm/Hz)
5558 G27
TYPICAL PERFORMANCE CHARACTERISTICS
Noise Floor Distribution
VBB = 400mVP-P 20 -40C 25C 85C PERCENTAGE (%) 40
LO Leakage Distribution
-40C 25C 85C VBB = 400mVP-P
-40C 25C 85C
15 PERCENTAGE (%)
30
10
20
5
10
0
8 -7.5 -7 -6.5 -6 -5.5 -5 -4.5 -4 -3.5 GAIN (dB)
5558 G26
-50
-48
-46 -44 -42 -40 LO LEAKAGE (dBm)
-38
-36
5558 G28
Image Rejection Distribution
20 VBB = 400mVP-P LO FEEDTHROUGH (dBm), IR (dBc) -40C 25C 85C -40
LO Feedthrough and Image Rejection vs Temperature After Calibration at 25C
CALIBRATED WITH PRF = -10dBm fBBI = 2MHz, 0 fBBQ = 2MHz, 90 + CAL LO FEEDTHROUGH -60
15 PERCENTAGE (%)
-50
10
5
-70
5
-80 IMAGE REJECTION
0 <-66 -62 -58 -54 -50 -46 IMAGE REJECTION (dBc) -42
5558 G29
-90 -40
-20
0 20 40 TEMPERATURE (C)
60
80
5558 G30
PIN FUNCTIONS
EN (Pin 1): Enable Input. When the Enable pin voltage is higher than 1V, the IC is turned on. When the Enable voltage is less than 0.5V or if the pin is disconnected, the IC is turned off. The voltage on the Enable pin should never exceed VCC by more than 0.5V, in order to avoid possible damage to the chip. GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9, 15 and the Exposed Pad, Pin 17, are connected to each other internally. Pins 2 and 4 are connected to each other internally and function as the ground return for the LO signal. Pins 10 and 12 are connected to each other internally and function as the ground return for the on-chip RF balun. For best RF performance, Pins 2, 4, 6, 9, 10, 12, 15 and the Exposed Pad, Pin 17, should be connected to the printed circuit board ground plane.
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LT5558 PIN FUNCTIONS
LO (Pin 3): LO Input. The LO input is an AC-coupled singleended input with approximately 50 input impedance at RF frequencies. Externally applied DC voltage should be within the range -0.5V to (VCC + 0.5V) in order to avoid turning on ESD protection diodes. BBPQ, BBMQ (Pins 7, 5): Baseband Inputs for the Q-channel. The differential input impedance is 3k. These pins are internally biased at about 2.1V. Applied common mode voltage must stay below 2.5V. VCC (Pins 8, 13): Power Supply. Pins 8 and 13 are connected to each other internally. It is recommended to use 0.1F capacitors for decoupling to ground on each of these pins. RF (Pin 11): RF Output. The RF output is an AC-coupled single-ended output with approximately 50 output impedance at RF frequencies. Externally applied DC voltage should be within the range -0.5V to (VCC + 0.5V) in order to avoid turning on ESD protection diodes. BBPI, BBMI (Pins 14, 16): Baseband Inputs for the I-channel. The differential input impedance is 3k. These pins are internally biased at about 2.1V. Applied common mode voltage must stay below 2.5V.
BLOCK DIAGRAM
VCC 8 BBPI 14 V-I BBMI 16 13 LT5558
0 90 BALUN BBPQ BBMQ 7 5 2 4 GND V-I
11 RF
1
EN
6
9
3 LO
10
12
15 GND
17
5558 BD
APPLICATIONS INFORMATION
The LT5558 consists of I and Q input differential voltageto-current converters, I and Q up-conversion mixers, an RF output signal combiner/balun, an LO quadrature phase generator and LO buffers. External I and Q baseband signals are applied to the differential baseband input pins, BBPI, BBMI, and BBPQ, BBMQ. These voltage signals are converted to currents and translated to RF frequency by means of double-balanced up-converting mixers. The mixer outputs are combined in an RF output balun, which also transforms the output impedance to 50. The center frequency of the resulting RF signal is equal to the LO signal frequency. The LO input drives a phase shifter which splits the LO signal into in-phase and quadrature LO signals. These LO signals are then applied to on-chip buffers which drive the upconversion mixers. Both the LO input and RF output are single-ended, 50-matched and AC coupled. Baseband Interface The baseband inputs (BBPI, BBMI), (BBPQ, BBMQ) present a differential input impedance of about 3k. At each of the four baseband inputs, a low-pass filter using 200 and 1.8pF to ground is incorporated (see Figure 1), which limits the baseband -1dB bandwidth to approximately 250MHz. The common-mode voltage is about 2.1V and is slightly temperature dependent. At TA = -40C, the common-mode voltage is about 2.28V and at TA = 85C it is about 2.01V.
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LT5558 APPLICATIONS INFORMATION
RF VCC = 5V C LT5558 BALUN VCC C5 8, 13 11 C1 14 FROM Q LOPI LOMI BB SOURCE 2.1VDC C2 1 C3 7 2.1VDC C4 BB SOURCE VCC RF EN BBPI BBPQ 4.5V TO 5.25V RF OUT
LT5558 16 5 BBMI BBMQ 2.1VDC 2.1VDC LO GND
200 BBPI 1.3k 1.8P CM 1.3k 1.8P 200 BBMI VREF = 0.5V
2, 4, 6, 9, 10, 12, 15, 17
3
5558 F03
Figure 3. AC-Coupled Baseband Interface
GND
5558 F01
low-frequency high-pass corner together with the LT5558's differential input impedance of 3k. Usually, capacitors C1 to C4 will be chosen equal and in such a way that the -3dB corner frequency f-3dB = 1/( * RIN,DIFF * C1) is much lower than the lowest baseband frequency. DC coupling between the DAC outputs and the LT5558 baseband inputs is recommended, because AC coupling will introduce a low-frequency time constant that may affect the signal integrity. Active level shifters may be required to adapt the common mode level of the DAC outputs to the common mode input voltage of the LT5558. Such circuits may, however, suffer degraded LO leakage performance as small DC offsets and variations over temperature accumulate. A better scheme is shown in Figure 16, where feedback is used to track out these variations. LO Section The internal LO input amplifier performs single-ended to differential conversion of the LO input signal. Figure 4 shows the equivalent circuit schematic of the LO input. The internal, differential LO signal is split into in-phase and quadrature (90 phase shifted) signals that drive LO buffer sections. These buffers drive the double balanced I and Q mixers. The phase relationship between
VCC 20pF
Figure 1. Simplifed Circuit Schematic of the LT5558 (Only I-Half is Drawn)
If the I/Q signals are DC-coupled to the LT5558, it is important that the applied common-mode voltage level of the I and Q inputs is about 2.1V in order to properly bias the LT5558. Some I/Q generators allow setting the common-mode voltage independently. In this case, the common-mode voltage of those generators must be set to 1.05V to match the LT5558 internal bias where the internal DC voltage of the signal generators is set to 2.1V due to the source-load voltage division (See Figure 2). The LT5558 baseband inputs should be driven differentially, otherwise, the even-order distortion products will degrade the overall linearity severely. Typically, a DAC will be the signal source for the LT5558. A pulse-shaping filter should be placed between the DAC outputs and the LT5558's baseband inputs. An AC-coupled baseband interface with the LT5558 is drawn in Figure 3. Capacitors C1 to C4 will introduce a
GENERATOR 50 1.05VCC 50 GENERATOR 50 2.1VDC LT5558 1.5k
+ -
2.1VDC
+ -
2.1VDC
2.1VDC
+ -
5558 F02
LO INPUT 50
5558 F04
Figure 2. DC Voltage Levels for a Generator Programmed at 1.05VDC for a 50 Load and the LT5558 as a Load
Figure 4. Equivalent Circuit Schematic of the LO Input
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9
LT5558 APPLICATIONS INFORMATION
the LO input and the internal in-phase LO and quadrature LO signals is fixed, and is independent of start-up conditions. The phase shifters are designed to deliver accurate quadrature signals for an LO frequency near 900MHz. For frequencies significantly below 750MHz or above 1.1GHz, the quadrature accuracy will diminish, causing the image rejection to degrade. The LO pin input impedance is about 50 and the recommended LO input power window is -2dBm to + 2dBm. For PLO < -2dBm, the gain, OIP2, OIP3, dynamic-range (in dBc/Hz) and image rejection will degrade, especially at TA = 85C. Harmonics present on the LO signal can degrade the image rejection, because they introduce a small excess phase shift in the internal phase splitter. For the second (at 1.8GHz) and third harmonics (at 2.7GHz) at -20dBc level, the introduced signal at the image frequency is about -61dBc or lower, corresponding to an excess phase shift much less than 1 degree. For the second and third harmonics at -10dBc, still the introduced signal at the image frequency is about -51dBc. Higher harmonics than the third will have less impact. The LO return loss typically will be better than 10dB over the 750MHz to 1GHz range. Table 1 shows the LO port input impedance vs. frequency. The return loss S11 on the LO port can be improved at lower frequencies by adding a shunt capacitor.
Table 1. LO Port Input Impedance vs Frequency for EN = High and PLO = 0dBm
FREQUENCY (MHz) 500 600 700 800 900 1000 1100 1200 S11 INPUT IMPEDANCE () 50.5 + j10.3 63.8 + j4.6 70.7 - j6.9 70.7 - j20.3 63.9 - j30.6 56.7 - j32.2 52.1 - j31.3 46.3 - j32.0 MAG 0.101 0.127 0.180 0.237 0.285 0.295 0.295 0.318 ANGLE 81.3 16.0 -15.2 -34.9 -50.5 -61.4 -69.1 -78.0
Table 2. LO Port Input Impedance vs Frequency for EN = Low and PLO = 0dBm
FREQUENCY (MHz) 500 600 700 800 900 1000 1100 1200 S11 INPUT IMPEDANCE () 37.3 + j43.4 72.1 + j74.8 184.7 + j77.8 203.6 - j120.8 75.9 - j131.5 36.7 - j99.0 23.4 - j77.4 17.8 - j62.8 MAG 0.464 0.545 0.630 0.696 0.737 0.760 0.768 0.764 ANGLE 79.7 42.1 11.7 -12.7 -32.6 -48.8 -62.4 -74.3
RF Section After up-conversion, the RF outputs of the I and Q mixers are combined. An on-chip balun performs internal differential to single-ended output conversion, while transforming the output signal impedance to 50. Table 3 shows the RF port output impedance vs frequency.
Table 3. RF Port Output Impedance vs Frequency for EN = High and PLO = 0dBm
FREQUENCY (MHz) 500 600 700 800 900 1000 1100 1200 S22 OUTPUT IMPEDANCE () 22.8 + j4.9 30.2 + j11.4 42.7 + j12.9 53.7 + j3.0 52.0 - j10.1 44.8 - j15.2 39.1 - j15.1 35.7 - j13.1 MAG 0.380 0.283 0.159 0.045 0.101 0.168 0.206 0.224 ANGLE 165.8 141.9 111.8 37.2 -73.2 -99.7 -116.1 -128.9
The input impedance of the LO port is different if the part is in shutdown mode. The LO input impedance for EN = Low is given in Table 2.
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10
LT5558 APPLICATIONS INFORMATION
The RF output S22 with no LO power applied is given in Table 4.
Table 4. RF Port Output Impedance vs Frequency for EN = High and No LO Power Applied
FREQUENCY (MHz)( 500 600 700 800 900 1000 1100 1200 S22 OUTPUT IMPEDANCE () 23.4 + j5.0 31.7 + j10.7 44.1 + j9.5 50.9 - j1.7 46.8 - j11.1 40.8 - j13.5 36.6 - j12.6 34.3 - j10.5 MAG 0.367 0.257 0.118 0.019 0.118 0.178 0.209 0.222 ANGLE 165.5 142.0 116.1 -60.8 -99.3 -115.5 -128.1 -139.0
Note that an ESD diode is connected internally from the RF output to the ground. For strong output RF signal levels (higher than 3dBm), this ESD diode can degrade the linearity performance if an external 50 termination impedance is connected directly to ground. To prevent this, a coupling capacitor can be inserted in the RF output line. This is strongly recommended during 1dB compression measurements. Enable Interface Figure 6 shows a simplified schematic of the EN pin interface. The voltage necessary to turn on the LT5558 is 1V. To disable (shut down) the chip, the enable voltage must be below 0.5V. If the EN pin is not connected, the chip is disabled. This EN = Low condition is guaranteed by the 75k on-chip pull-down resistor. It is important that the voltage at the EN pin does not exceed VCC by more than 0.5V. If this should occur, the full-chip supply current could be sourced through the EN pin ESD protection diodes, which are not designed for this purpose. Damage to the chip may result.
VCC
For EN = Low the S22 is given in Table 5. To improve S22 for lower frequencies, a series capacitor can be added to the RF output. At higher frequencies, a shunt inductor can improve the S22. Figure 5 shows the equivalent circuit schematic of the RF output.
Table 5. RF Port Output Impedance vs Frequency for EN = Low
FREQUENCY (MHz) 500 600 700 800 900 1000 1100 1200 S22 OUTPUT IMPEDANCE () 21.8 + j4.8 28.4 + j11.8 40.2 + j15.4 54.3 + j8.3 56.7 - j7.2 49.2 - j15.8 41.9 - j17.0 37.3 - j15.3 MAG 0.398 0.311 0.200 0.090 0.092 0.158 0.203 0.225 ANGLE 166.5 142.9 112.9 58.1 -43.3 -83.8 -105.0 -120.0
EN 75k 25k
5558 F06
Figure 6. EN Pin Interface
Evaluation Board
VCC 21pF RF OUTPUT 52 1pF 7nH
5558 F05
Figure 5. Equivalent Circuit Schematic of the RF Output
Figure 7 shows the evaluation board schematic. A good ground connection is required for the LT5558's Exposed Pad. If this is not done properly, the RF performance will degrade. Additionally, the Exposed Pad provides heat sinking for the part and minimizes the possibility of the chip overheating. R1 (optional) limits the EN pin current in the event that the EN pin is pulled high while the VCC inputs are low. The application board PCB layouts are shown in Figures 8 and 9.
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11
LT5558 APPLICATIONS INFORMATION
J1 BBIM J2 BBIP VCC 16 1 2 3 4 EN GND LO GND LT5558 15 14 13 GND RF GND GND 12 11 10 9 17 C2 100nF J3 RF OUT
R1 100 VCC EN J4 LO IN
BBMI GND BBPI VCC
GND BBMQ GND BBPQ VCC 5 J5 BBQM GND 6 7 8
C1 100nF
J6 BBQP
BOARD NUMBER: DC1017A
5558 F07
Figure 9. Bottom Side of Evaluation Board
Figure 7. Evaluation Circuit Schematic
If the output power is high, the ACPR will be limited by the linearity performance of the part. If the output power is low, the ACPR will be limited by the noise performance of the part. In the middle, an optimum ACPR is obtained. Because of the LT5558's very high dynamic-range, the test equipment can limit the accuracy of the ACPR measurement. Consult Design Note 375 or the factory for advice on ACPR measurement if needed. The ACPR performance is sensitive to the amplitude mismatch of the BBIP and BBIM (or BBQP and BBQM) inputs. This is because a difference in AC current amplitude will give rise to a difference in amplitude between the even-order harmonic products generated in the internal V-I converter. As a result, they will not cancel out entirely. Therefore, it is important to keep the amplitudes at the BBIP and BBIM (or BBQP and BBQM) inputs as equal as possible.
Figure 8. Component Side of Evaluation Board
Application Measurements The LT5558 is recommended for base-station applications using various modulation formats. Figure 10 shows a typical application. Figure 11 shows the ACPR performance for CDMA2000 using one and three channel modulation. Figures 12 and 13 illustrate the 1- and 3-channel CDMA2000 measurement. To calculate ACPR, a correction is made for the spectrum analyzer noise floor (Application Note 99).
LO feedthrough and image rejection performance may be improved by means of a calibration procedure. LO feedthrough is minimized by adjusting the differential DC offset at the I and the Q baseband inputs. Image rejection can be improved by adjusting the gain and the phase difference between the I and the Q baseband inputs. The LO feedthrough and Image Rejection can also change as a function of the baseband drive level, as depicted in Figure 14.
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12
LT5558 APPLICATIONS INFORMATION
5V BASEBAND GENERATOR 14 I-DAC 16 V-I I-CHANNEL EN 1 Q-CHANNEL V-I 0 90 BALUN 7 Q-DAC 5 11 VCC 8, 13 LT5558 100nF x2 RF = 600MHz TO 1100MHz PA
2, 4, 6, 9, 10, 12, 15, 17
3 VCO/SYNTHESIZER
5558 F10
Figure 10. 600MHz to 1.1GHz Direct Conversion Transmitter Application
-40 -110 NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
DOWNLINK TEST MODEL 64 DPCH 3-CH ACPR 3-CH ALTCPR
-30 -40 POWER IN 30kHz BW (dBm) -50 -60 -70 -80 -90 -100 -110 -120
SPECTRUM ANALYSER NOISE FLOOR CORRECTED SPECTRUM UNCORRECTED SPECTRUM DOWNLINK TEST MODEL 64 DPCH
-50 ACPR, ALTCPR (dBc)
-120
-60 1-CH ACPR -70 1-CH NOISE -80 1-CH ALTCPR 3-CH NOISE -90 -30 -20 -15 -10 -5 0 -25 RF OUTPUT POWER PER CARRIER (dBm)
5558 TA01b
-130
-140
-150
-160
-130 894
896
900 902 898 RF FREQUENCY (MHz)
904
906
5558 F13
Figure 11. ACPR, ALTCPR and Noise for CDMA2000 Modulation
-30 -40 POWER IN 30kHz BW (dBm) -50 -60 -70 -80 -90 UNCORRECTED SPECTRUM CORRECTED SPECTRUM
Figure 13. 3-Channel CDMA2000 Spectrum
DOWNLINK TEST MODEL 64 DPCH
Example: RFID Application In Figure 15 the interface between the LTC1565 (U2, U3) and the LT5558 is designed for RFID applications. The LTC1565 is a seventh-order, 650kHz, continuous-time, linear-phase, lowpass filter. The optimum output common-mode level of the LTC1565 is about 2.5V and the optimum input common-mode level of the LT5558 is around 2.1V and is temperature dependent. To adapt the common-mode level of the LTC1565 to the LT5558, a level shift network consisting of R1 to R6 and R11 to R16 is used. The output common-mode level of the LTC1565 can be adjusted by overriding the internally generated voltage on pin 3 of the LTC1565.
5558fa
-100 -110 -120
SPECTRUM ANALYSER NOISE FLOOR -130 896.25 897.75 899.25 900.75 902.25 903.75 RF FREQUENCY (MHz)
5558 F12
Figure 12. 1-Channel CDMA2000 Spectrum
13
LT5558 APPLICATIONS INFORMATION
10 0 PRF, LOFT (dBm), IR (dBc) -10 -20 -30 -40 -50 -60 -70 -80 -90 0 1 3 4 5 2 I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
5558 F14
-40C 85C 25C
PRF
LOFT 85C -40C
VCC = 5V EN = HIGH fLO = 900MHz, fBBI = 2MHz, 0 fBBQ = 2MHz, 90 fRF = fBB + fLO PLO = 0dBm
IR -40C 25C
Figure 14. LO Feedthrough and Image Rejection vs Baseband Drive Voltage After Calibration at 25C
The common-mode voltage on the LT5558 is sampled using resistors R7, R8, R17 and R18 and shifted up to about 2.5V using resistor R9. Op amp U4 compensates for the gain loss in the resistor networks and provides a low-ohmic drive to steer the common-mode input pins of U2 and U3. Resistors R20 and R21 improve op amp
U4's stability while driving the large supply decoupling capacitors C3 and C4. This corrected common-mode voltage is applied to the common-mode input pins of U2 and U3 (pins 3). This results in a positive feedback loop for the common mode voltage with a loop gain of about -10dB. This technique ensures that the current compliance on the baseband input pins of the LT5558 is not exceeded under supply voltage or temperature extremes, and internal diode voltage shifts or combinations of these. The core current of the LT5558 is thus maintained at its designed level for optimum performance. The recommended common-mode voltage applied to the inputs of the LTC1565 is about 2V. Resistor tolerances are recommended 1% accuracy or better. The total current consumption is about 160mA and the noise floor at 20MHz offset is -147dBm/Hz with 3.7dBm RF output power. For a 2VPP, DIFF baseband input swing, the output power at fLO + fBB is 1.6dBm and the third harmonic at fLO - 3fBB is -48.6dBm. For a 2.6VPP, DIFF input, the output power at fLO + fBB is 3.8dBm and the third harmonic at fLO - 3fBB is -40.5dBm.
RF = 3dBm MAX VCC R24 3.32k 4.5V to 5.25V
R22 22.1k
R20 249
R5 3.57k
R6 R9 3.57k 88.7k C1, C2 2 x 0.1F
R22 22.1k
3
+IN BB SOURCE 2 -IN 2.5VDC 3 C3 0.1F 4
1
U2 +OUT -OUT
8 7
R1 499
8, 13 2.1VDC R3 3.01k R7 49.9k R8 49.9k 16 2.1VDC
11
1 2.1VDC R17 49.9k R13 3.01k
VCC RF EN 14 7 BBPI BBPQ
LTC1565-31 GND V- V+ SHDN 6 5
2.5VDC R2 499 R4 3.01k
U1 LT5558
R18 49.9k BBMI GND BBMQ LO 3 5
2, 4, 6, 9, 10 12, 15, 17
Figure 15. Baseband Interface Schematic of the LTC1565 with the LT5558 for RFID applications.
14
+ -
4
5 2
U4
1
LT1797 R16 3.57k R15 3.57k R21 249
R11 499
8 7 2.5VDC
U3 +OUT -OUT +IN -IN
1 BB 2 SOURCE 2.5VDC 3 4 C4 0.1F
5558 F16
LTC1565-31 6 5 V+ SHDN GND V-
R14 3.01k 2.1VDC
R12 499
5558fa
LT5558 PACKAGE DESCRIPTION
UF Package 16-Lead Plastic QFN (4mm x 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 0.05
4.35 0.05 2.15 0.05 2.90 0.05 (4 SIDES)
PACKAGE OUTLINE 0.30 0.05 0.65 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW--EXPOSED PAD 4.00 0.10 (4 SIDES) PIN 1 TOP MARK (NOTE 6) 2.15 0.10 (4-SIDES) 0.75 0.05 R = 0.115 TYP PIN 1 NOTCH R = 0.20 TYP OR 0.35 x 45 CHAMFER
15
16 0.55 0.20 1 2
(UF16) QFN 10-04
0.200 REF 0.00 - 0.05 NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE
0.30 0.05 0.65 BSC
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LT5558 RELATED PARTS
PART NUMBER DESCRIPTION Infrastructure LT5511 High Linearity Upconverting Mixer LT5512 DC to 3GHz High Signal Level Downconverting Mixer LT5514 LT5515 LT5516 LT5517 LT5518 LT5519 LT5520 LT5521 LT5522 LT5524 LT5526 LT5527 Ultralow Distortion, IF Amplifier/ADC Driver with Digitally Controlled Gain 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 40MHz to 900MHz Quadrature Demodulator 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 10MHz to 3700MHz High Linearity Upconverting Mixer 600MHz to 2.7GHz High Signal Level Downconverting Mixer Low Power, Low Distortion ADC Driver with Digitally Programmable Gain High Linearity, Low Power Downconverting Mixer COMMENTS RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer DC to 3GHz, 17dBm IIP3, Integrated LO Buffer 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range 20dBm IIP3, Integrated LO Quadrature Generator 21.5dBm IIP3, Integrated LO Quadrature Generator 21dBm IIP3, Integrated LO Quadrature Generator 22.8dBm OIP3 at 2GHz, -158.2dBm/Hz Noise Floor, 50 Single-Ended LO and RF Ports, 4-Ch W-CDMA ACPR = -64dBc at 2.14GHz 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50 Matching, Single-Ended LO and RF Ports Operation 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50 Matching, Single-Ended LO and RF Ports Operation 24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO Port Operation 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50 Single-Ended RF and LO Ports 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA, -65dBm LO-RF Leakage IIP3 = 23.5dBm and NF = 12.5dB at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA 21.8dBm OIP3 at 2GHz, -159.3dBm/Hz Noise Floor, 50, 0.5VDC Baseband Interface, 4-Ch W-CDMA ACPR = -66dBc at 2.14GHz 22.9dBm OIP3 at 850MHz, -160.3dBm/Hz Noise Floor, 50, 0.5VDC Baseband Interface, 3-Ch CDMA2000 ACPR = -71.4dBc at 850MHz 21.6dBm OIP3 at 2GHz, -158.6dBm/Hz Noise Floor, High-Ohmic 0.5VDC Baseband Interface, 4-Ch W-CDMA ACPR = -67.7dBc at 2.14GHz 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply 44dB Dynamic Range, Temperature Compensated, SC70 Package 36dB Dynamic Range, Low Power Consumption, SC70 Package Precision VOUT Offset Control, Shutdown, Adjustable Gain Precision VOUT Offset Control, Shutdown, Adjustable Offset Precision VOUT Offset Control, Adjustable Gain and Offset 1dB Output Variation over Temperature, 38ns Response Time 25ns Response Time, Comparator Reference Input, Latch Enable Input, -26dBm to +12dBm Input Range Low Frequency to 800MHz, 83dB Dynamic Range, 2.7V to 5.25V Supply Single 3.3V Supply, 910mW Consumption, 67.5dB SNR, 80dB SFDR, 775MHz Full Power BW Single 3V Supply, 222mW Consumption, 73dB SNR, 90dB SFDR Single 3V Supply, 395mW Consumption, 72.4dB SNR, 88dB SFDR, 640MHz Full Power BW
5558fa LT 0706 REV A * PRINTED IN USA
400MHz to 3.7GHz High Signal Level Downconverting Mixer LT5528 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator LT5568 700MHz to 1050MHz High Linearity Direct Quadrature Modulator LT5572 1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator RF Power Detectors LT5504 800MHz to 2.7GHz RF Measuring Receiver LTC(R)5505 RF Power Detectors with >40dB Dynamic Range LTC5507 100kHz to 1000MHz RF Power Detector LTC5508 300MHz to 7GHz RF Power Detector LTC5509 300MHz to 3GHz RF Power Detector LTC5530 300MHz to 7GHz Precision RF Power Detector LTC5531 300MHz to 7GHz Precision RF Power Detector LTC5532 300MHz to 7GHz Precision RF Power Detector LT5534 50MHz to 3GHz Loq RF Power Detector with 60dB Dynamic Range LTC5536 Precision 600MHz to 7GHz RF Detector with Fast Comparater LT5537 Wide Dynamic Range Loq RF/IF Detector High Speed ADCs LTC2220-1 12-Bit, 185Msps ADC LTC2249 LTC2255 14-Bit, 80Msps ADC 14-Bit, 125Msps ADC
16 Linear Technology Corporation
(408) 432-1900 FAX: (408) 434-0507
1630 McCarthy Blvd., Milpitas, CA 95035-7417
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2006

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